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TPN11006NL,LQ

TPN11006NL,LQ Toshiba Semiconductor and Storage

docget.jsp?did=14108&prodName=TPN11006NL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 2466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
13+ 1.36 EUR
100+ 1.04 EUR
500+ 0.82 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 12
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Technische Details TPN11006NL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 17A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V, Power Dissipation (Max): 700mW (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V.

Weitere Produktangebote TPN11006NL,LQ nach Preis ab 0.78 EUR bis 2.15 EUR

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Preis ohne MwSt
TPN11006NL,LQ TPN11006NL,LQ Hersteller : Toshiba TPN11006NL_datasheet_en_20140227-1915973.pdf MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET
auf Bestellung 8133 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.15 EUR
28+ 1.92 EUR
100+ 1.31 EUR
500+ 1.09 EUR
1000+ 0.93 EUR
3000+ 0.84 EUR
6000+ 0.78 EUR
Mindestbestellmenge: 25
TPN11006NL,LQ TPN11006NL,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14108&prodName=TPN11006NL Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
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