TPN11006NL,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.14 EUR |
| 16+ | 1.33 EUR |
| 50+ | 0.99 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.68 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
10 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TPN11006NL,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V, Power Dissipation (Max): 700mW (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V.
Weitere Produktangebote TPN11006NL,LQ nach Preis ab 0.76 EUR bis 2.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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TPN11006NL,LQ | Toshiba |
MOSFETs U-MOSVIII-H 60V 37A 23nC MOSFET |
auf Bestellung 5558 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPN11006NL,LQ |
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Hersteller: Toshiba
MOSFETs U-MOSVIII-H 60V 37A 23nC MOSFET
MOSFETs U-MOSVIII-H 60V 37A 23nC MOSFET
auf Bestellung 5558 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.78 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.84 EUR |
| 3000+ | 0.76 EUR |