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TPN11006PL,LQ

TPN11006PL,LQ Toshiba Semiconductor and Storage

docget.jsp?did=54662&prodName=TPN11006PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
9000+0.42 EUR
15000+0.41 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN11006PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 26A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V, Power Dissipation (Max): 610mW (Ta), 61W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V.

Weitere Produktangebote TPN11006PL,LQ nach Preis ab 0.35 EUR bis 1.51 EUR

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TPN11006PL,LQ TPN11006PL,LQ Hersteller : Toshiba TPN11006PL_datasheet_en_20160920-1568578.pdf MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 43185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.28 EUR
10+0.85 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.42 EUR
3000+0.37 EUR
6000+0.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TPN11006PL,LQ TPN11006PL,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=54662&prodName=TPN11006PL Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
auf Bestellung 26082 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
16+1.13 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH