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TPN1110ENH,L1Q

TPN1110ENH,L1Q Toshiba Semiconductor and Storage

TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.03 EUR
10000+ 0.98 EUR
Mindestbestellmenge: 5000
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Technische Details TPN1110ENH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 200V 7.2A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V, Power Dissipation (Max): 700mW (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V.

Weitere Produktangebote TPN1110ENH,L1Q nach Preis ab 1.08 EUR bis 2.6 EUR

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TPN1110ENH,L1Q TPN1110ENH,L1Q Hersteller : Toshiba Semiconductor and Storage TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 34738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.6 EUR
10+ 2.13 EUR
100+ 1.66 EUR
500+ 1.41 EUR
1000+ 1.14 EUR
2000+ 1.08 EUR
Mindestbestellmenge: 7
TPN1110ENH,L1Q TPN1110ENH,L1Q Hersteller : Toshiba TPN1110ENH_datasheet_en_20140227-1150917.pdf MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV
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