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TPN1200APL,L1Q

TPN1200APL,L1Q Toshiba

TPN1200APL_datasheet_en_20191018-2401229.pdf Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 1889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.95 EUR
10+1.23 EUR
100+0.81 EUR
500+0.64 EUR
1000+0.53 EUR
2500+0.52 EUR
5000+0.48 EUR
Mindestbestellmenge: 2
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Technische Details TPN1200APL,L1Q Toshiba

Description: PB-F POWER MOSFET TRANSISTOR TSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V, Power Dissipation (Max): 630mW (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 50 V.

Weitere Produktangebote TPN1200APL,L1Q nach Preis ab 0.54 EUR bis 2.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TPN1200APL,L1Q TPN1200APL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN1200APL_datasheet_en_20191018.pdf?did=59362&prodName=TPN1200APL Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 50 V
auf Bestellung 3623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.27 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
2000+0.54 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TPN1200APL,L1Q TPN1200APL,L1Q Hersteller : Toshiba tpn1200apl_datasheet_en_20191018.pdf Trans MOSFET N-CH Si 100V 66A 8-Pin TSON EP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN1200APL,L1Q TPN1200APL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN1200APL_datasheet_en_20191018.pdf?did=59362&prodName=TPN1200APL Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH