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TPN13008NH,L1Q

TPN13008NH,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=13537&prodName=TPN13008NH Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 4350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
14+1.27 EUR
100+0.91 EUR
500+0.80 EUR
1000+0.72 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN13008NH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 80V 18A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V, Power Dissipation (Max): 700mW (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V.

Weitere Produktangebote TPN13008NH,L1Q nach Preis ab 0.66 EUR bis 1.66 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TPN13008NH,L1Q TPN13008NH,L1Q Hersteller : Toshiba TPN13008NH_datasheet_en_20191030-1916250.pdf MOSFETs U-MOSVIII-H 80V 40A 18nC MOSFET
auf Bestellung 4910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.66 EUR
10+1.35 EUR
100+0.96 EUR
500+0.77 EUR
1000+0.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPN13008NH,L1Q TPN13008NH,L1Q Hersteller : Toshiba tpn13008nh_datasheet_en_20191030.pdf Trans MOSFET N-CH Si 80V 40A 8-Pin TSON Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN13008NH,L1Q TPN13008NH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13537&prodName=TPN13008NH Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH