TPN14006NH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N CH 60V 13A 8TSON-ADV, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 4V @ 200µA, Power Dissipation (Max): 700mW (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).