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TPN1600ANH,L1Q

TPN1600ANH,L1Q Toshiba

TPN1600ANH_datasheet_en_20191018-1916138.pdf Hersteller: Toshiba
MOSFETs N-Ch DTMOS VII-H 42W 1230pF 36A 100V
auf Bestellung 19647 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.9 EUR
10+1.23 EUR
100+0.83 EUR
500+0.69 EUR
1000+0.59 EUR
2500+0.57 EUR
5000+0.51 EUR
Mindestbestellmenge: 2
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Technische Details TPN1600ANH,L1Q Toshiba

Description: MOSFET N CH 100V 17A 8TSON-ADV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V, Power Dissipation (Max): 700mW (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V.

Weitere Produktangebote TPN1600ANH,L1Q nach Preis ab 0.59 EUR bis 2.11 EUR

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TPN1600ANH,L1Q TPN1600ANH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13538&prodName=TPN1600ANH Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 2066 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
14+1.33 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.59 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TPN1600ANH,L1Q TPN1600ANH,L1Q Hersteller : Toshiba tpn1600anh_datasheet_en_20191018.pdf Trans MOSFET N-CH 100V 36A 8-Pin TSON Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN1600ANH,L1Q TPN1600ANH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13538&prodName=TPN1600ANH Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH