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TPN19008QM,LQ

TPN19008QM,LQ Toshiba

4237393543453638464135373942364533333438393435343242324541433638.pdf Hersteller: Toshiba
MOSFETs PD=57W F=1MHZ
auf Bestellung 67436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.66 EUR
10+1.14 EUR
100+0.54 EUR
1000+0.53 EUR
3000+0.45 EUR
6000+0.44 EUR
9000+0.42 EUR
Mindestbestellmenge: 2
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Technische Details TPN19008QM,LQ Toshiba

Description: MOSFET N-CH 80V 34A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V, Power Dissipation (Max): 630mW (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V.

Weitere Produktangebote TPN19008QM,LQ nach Preis ab 0.54 EUR bis 1.69 EUR

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TPN19008QM,LQ TPN19008QM,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=68568&prodName=TPN19008QM Description: MOSFET N-CH 80V 34A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V
Power Dissipation (Max): 630mW (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V
auf Bestellung 2327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
16+1.16 EUR
100+0.55 EUR
500+0.54 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
TPN19008QM,LQ TPN19008QM,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=68568&prodName=TPN19008QM Description: MOSFET N-CH 80V 34A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V
Power Dissipation (Max): 630mW (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V
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Im Einkaufswagen  Stück im Wert von  UAH