TPN19008QM,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 34A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V
Power Dissipation (Max): 630mW (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V
Description: MOSFET N-CH 80V 34A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V
Power Dissipation (Max): 630mW (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.4 EUR |
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Technische Details TPN19008QM,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 34A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V, Power Dissipation (Max): 630mW (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V.
Weitere Produktangebote TPN19008QM,LQ nach Preis ab 0.56 EUR bis 1.21 EUR
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TPN19008QM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 34A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V Power Dissipation (Max): 630mW (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V |
auf Bestellung 7738 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN19008QM,LQ | Hersteller : Toshiba |
 MOSFET PD=57W F=1MHZ |
auf Bestellung 141047 Stücke: Lieferzeit 14-28 Tag (e) |
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