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TPN1R603PL,L1Q

TPN1R603PL,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=54484&prodName=TPN1R603PL
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.61 EUR
10000+0.58 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN1R603PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 80A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 300µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V.

Weitere Produktangebote TPN1R603PL,L1Q nach Preis ab 0.67 EUR bis 2.7 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TPN1R603PL,L1Q TPN1R603PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=54484&prodName=TPN1R603PL Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 31966 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.53 EUR
14+1.59 EUR
100+1.06 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.71 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPN1R603PL,L1Q TPN1R603PL,L1Q Toshiba 3941353838444633353930393239424544354430343444334438423532463732.pdf MOSFETs N-Ch 30V 2970pF 41nC 33A 30W
auf Bestellung 25276 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.7 EUR
10+1.7 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.74 EUR
2500+0.73 EUR
5000+0.67 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPN1R603PL,L1Q docget.jsp?did=54484&prodName=TPN1R603PL
TPN1R603PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 31966 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
14+1.59 EUR
100+1.06 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.71 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPN1R603PL,L1Q 3941353838444633353930393239424544354430343444334438423532463732.pdf
TPN1R603PL,L1Q
Hersteller: Toshiba
MOSFETs N-Ch 30V 2970pF 41nC 33A 30W
auf Bestellung 25276 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.7 EUR
10+1.7 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.74 EUR
2500+0.73 EUR
5000+0.67 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH