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TPN1R603PL,L1Q

TPN1R603PL,L1Q Toshiba Semiconductor and Storage

TPN1R603PL_datasheet_en_20191018.pdf?did=54484&prodName=TPN1R603PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.55 EUR
10000+0.54 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN1R603PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 80A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 300µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V.

Weitere Produktangebote TPN1R603PL,L1Q nach Preis ab 0.56 EUR bis 2.04 EUR

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TPN1R603PL,L1Q TPN1R603PL,L1Q Hersteller : Toshiba TPN1R603PL_datasheet_en_20191018-1075448.pdf MOSFETs N-Ch 30V 2970pF 41nC 33A 30W
auf Bestellung 27196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.78 EUR
10+1.20 EUR
100+0.91 EUR
500+0.77 EUR
1000+0.62 EUR
2500+0.59 EUR
5000+0.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPN1R603PL,L1Q TPN1R603PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN1R603PL_datasheet_en_20191018.pdf?did=54484&prodName=TPN1R603PL Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 34363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.34 EUR
100+0.91 EUR
500+0.74 EUR
1000+0.63 EUR
2000+0.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH