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TPN2010FNH,L1Q

TPN2010FNH,L1Q Toshiba

TPN2010FNH_datasheet_en_20140225-1150747.pdf Hersteller: Toshiba
MOSFETs UMOSVIII 250V 200m (VGS=10V) TSON-ADV
auf Bestellung 11650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.36 EUR
10+1.97 EUR
25+1.81 EUR
100+1.41 EUR
500+1.15 EUR
1000+1.07 EUR
Mindestbestellmenge: 2
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Technische Details TPN2010FNH,L1Q Toshiba

Description: MOSFET N-CH 250V 5.6A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V, Power Dissipation (Max): 700mW (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V.

Weitere Produktangebote TPN2010FNH,L1Q nach Preis ab 1.06 EUR bis 3.27 EUR

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TPN2010FNH,L1Q TPN2010FNH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14597&prodName=TPN2010FNH Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 4528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.19 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.12 EUR
2000+1.06 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPN2010FNH,L1Q TPN2010FNH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14597&prodName=TPN2010FNH Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
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Im Einkaufswagen  Stück im Wert von  UAH