Produkte > TOSHIBA > TPN2R203NC,L1Q
TPN2R203NC,L1Q

TPN2R203NC,L1Q Toshiba

tpn2r203nc_datasheet_en_20191030.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+0.71 EUR
10000+ 0.66 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details TPN2R203NC,L1Q Toshiba

Description: MOSFET N-CH 30V 45A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 22.5A, 10V, Power Dissipation (Max): 700mW (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 500µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V.

Weitere Produktangebote TPN2R203NC,L1Q nach Preis ab 0.66 EUR bis 2.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TPN2R203NC,L1Q TPN2R203NC,L1Q Hersteller : Toshiba tpn2r203nc_datasheet_en_20191030.pdf Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+0.71 EUR
10000+ 0.66 EUR
Mindestbestellmenge: 5000
TPN2R203NC,L1Q TPN2R203NC,L1Q Hersteller : Toshiba Semiconductor and Storage TPN2R203NC_datasheet_en_20191030.pdf?did=13938&prodName=TPN2R203NC Description: MOSFET N-CH 30V 45A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 22.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.76 EUR
Mindestbestellmenge: 5000
TPN2R203NC,L1Q TPN2R203NC,L1Q Hersteller : Toshiba Semiconductor and Storage TPN2R203NC_datasheet_en_20191030.pdf?did=13938&prodName=TPN2R203NC Description: MOSFET N-CH 30V 45A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 22.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
auf Bestellung 9424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.92 EUR
12+ 1.57 EUR
100+ 1.22 EUR
500+ 1.03 EUR
1000+ 0.84 EUR
2000+ 0.79 EUR
Mindestbestellmenge: 10
TPN2R203NC,L1Q TPN2R203NC,L1Q Hersteller : Toshiba TPN2R203NC_datasheet_en_20191030-1915945.pdf MOSFET X35PBF Power MOSFET Trans VGS10V VDS30V
auf Bestellung 22306 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.81 EUR
23+ 2.3 EUR
100+ 1.79 EUR
500+ 1.52 EUR
1000+ 1.16 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 19
TPN2R203NC,L1Q TPN2R203NC,L1Q Hersteller : Toshiba tpn2r203nc_datasheet_en_20191030.pdf Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R
Produkt ist nicht verfügbar