auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.58 EUR |
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Technische Details TPN2R203NC,L1Q Toshiba
Description: MOSFET N-CH 30V 45A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 22.5A, 10V, Power Dissipation (Max): 700mW (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 500µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V.
Weitere Produktangebote TPN2R203NC,L1Q nach Preis ab 0.58 EUR bis 2.66 EUR
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TPN2R203NC,L1Q | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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TPN2R203NC,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 45A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 22.5A, 10V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN2R203NC,L1Q | Hersteller : Toshiba |
MOSFETs X35PBF Power MOSFET Trans VGS10V VDS30V |
auf Bestellung 14114 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN2R203NC,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 45A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 22.5A, 10V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V |
auf Bestellung 5921 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN2R203NC,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R |
Produkt ist nicht verfügbar |