Weitere Produktangebote TPN2R304PL,L1Q nach Preis ab 0.48 EUR bis 2.06 EUR
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TPN2R304PL,L1Q | Hersteller : Toshiba |
MOSFETs 40 Volt N-Channel |
auf Bestellung 4376 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN2R304PL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 80A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V Power Dissipation (Max): 630mW (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V |
auf Bestellung 3615 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN2R304PL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 40V 100A 8-Pin TSON Advance |
Produkt ist nicht verfügbar |
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TPN2R304PL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 40V 100A 8-Pin TSON Advance |
Produkt ist nicht verfügbar |
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TPN2R304PL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 80A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V Power Dissipation (Max): 630mW (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V |
Produkt ist nicht verfügbar |



