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TPN2R304PL,L1Q

TPN2R304PL,L1Q Toshiba Semiconductor and Storage

TPN2R304PL_datasheet_en_20191018.pdf?did=30264&prodName=TPN2R304PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.53 EUR
Mindestbestellmenge: 5000
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Technische Details TPN2R304PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 80A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V, Power Dissipation (Max): 630mW (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 300µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V.

Weitere Produktangebote TPN2R304PL,L1Q nach Preis ab 0.7 EUR bis 2.23 EUR

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Preis ohne MwSt
TPN2R304PL,L1Q TPN2R304PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN2R304PL_datasheet_en_20191018.pdf?did=30264&prodName=TPN2R304PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
auf Bestellung 39247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.48 EUR
100+ 1.11 EUR
500+ 0.93 EUR
1000+ 0.79 EUR
2000+ 0.7 EUR
Mindestbestellmenge: 12
TPN2R304PL,L1Q TPN2R304PL,L1Q Hersteller : Toshiba TPN2R304PL_datasheet_en_20191018-1916429.pdf MOSFET 40 Volt N-Channel
auf Bestellung 23235 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.23 EUR
27+ 1.93 EUR
100+ 1.36 EUR
500+ 1.14 EUR
1000+ 0.86 EUR
5000+ 0.82 EUR
10000+ 0.78 EUR
Mindestbestellmenge: 24
TPN2R304PL,L1Q
Produktcode: 194006 		TPN2R304PL_datasheet_en_20191018.pdf?did=30264&prodName=TPN2R304PL Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
TPN2R304PL,L1Q TPN2R304PL,L1Q Hersteller : Toshiba tpn2r304pl_datasheet_en_20191018.pdf Trans MOSFET N-CH Si 40V 100A 8-Pin TSON Advance
Produkt ist nicht verfügbar
TPN2R304PL,L1Q TPN2R304PL,L1Q Hersteller : Toshiba tpn2r304pl_datasheet_en_20191018.pdf Trans MOSFET N-CH Si 40V 100A 8-Pin TSON Advance
Produkt ist nicht verfügbar
TPN2R304PL,L1Q TPN2R304PL,L1Q Hersteller : Toshiba tpn2r304pl_datasheet_en_20191018.pdf Trans MOSFET N-CH Si 40V 100A 8-Pin TSON Advance
Produkt ist nicht verfügbar