| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.39 EUR |
| 10000+ | 1.34 EUR |
| 15000+ | 1.29 EUR |
| 20000+ | 1.23 EUR |
| 25000+ | 1.17 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
5000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TPN2R703NL,L1Q Toshiba
Description: MOSFET N-CH 30V 45A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22.5A, 10V, Power Dissipation (Max): 700mW (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 300µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V.
Weitere Produktangebote TPN2R703NL,L1Q nach Preis ab 0.9 EUR bis 3.37 EUR
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TPN2R703NL,L1Q | Toshiba |
 Trans MOSFET N-CH 30V 90A 8-Pin TSON EP Advance T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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TPN2R703NL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 45A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22.5A, 10V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
auf Bestellung 3818 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN2R703NL,L1Q | Toshiba |
MOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V |
auf Bestellung 17780 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPN2R703NL,L1Q |
|
Hersteller: Toshiba
Trans MOSFET N-CH 30V 90A 8-Pin TSON EP Advance T/R
Trans MOSFET N-CH 30V 90A 8-Pin TSON EP Advance T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.39 EUR |
| 10000+ | 1.37 EUR |
| 15000+ | 1.33 EUR |
| 20000+ | 1.3 EUR |
| 25000+ | 1.27 EUR |
| TPN2R703NL,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 45A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
auf Bestellung 3818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 13+ | 1.68 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.96 EUR |
| TPN2R703NL,L1Q |
|
Hersteller: Toshiba
MOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V
MOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V
auf Bestellung 17780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.37 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 0.96 EUR |
| 5000+ | 0.9 EUR |