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TPN2R703NL,L1Q

TPN2R703NL,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=14267&prodName=TPN2R703NL
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
13+1.41 EUR
100+0.99 EUR
500+0.86 EUR
1000+0.81 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN2R703NL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 45A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 2.3V @ 300µA, Power Dissipation (Max): 700mW (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote TPN2R703NL,L1Q nach Preis ab 0.69 EUR bis 2.66 EUR

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Preis
TPN2R703NL,L1Q TPN2R703NL,L1Q Hersteller : Toshiba 8150AC1474E5A6AFC1F9510834351BFC48F011405E25271E9BCC58EC69260AE7.pdf MOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V
auf Bestellung 19881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
10+1.69 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.81 EUR
2500+0.76 EUR
5000+0.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPN2R703NL,L1Q TPN2R703NL,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14267&prodName=TPN2R703NL Description: MOSFET N-CH 30V 45A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH