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TPN2R805PL,L1Q

TPN2R805PL,L1Q Toshiba

TPN2R805PL_datasheet_en_20191030-1114628.pdf Hersteller: Toshiba
MOSFETs U-MOSIX-H 45V 139A 39nC MOSFET
auf Bestellung 1252 Stücke:
Lieferzeit 10-14 Tag (e)
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2+1.72 EUR
10+1.33 EUR
100+0.90 EUR
500+0.71 EUR
1000+0.58 EUR
5000+0.53 EUR
Mindestbestellmenge: 2
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Technische Details TPN2R805PL,L1Q Toshiba

Description: MOSFET N-CH 45V 80A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V, Power Dissipation (Max): 2.67W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 300µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V.

Weitere Produktangebote TPN2R805PL,L1Q nach Preis ab 0.59 EUR bis 2.15 EUR

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TPN2R805PL,L1Q TPN2R805PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN2R805PL_datasheet_en_20191030.pdf?did=53831&prodName=TPN2R805PL Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
auf Bestellung 4661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
13+1.36 EUR
100+0.90 EUR
500+0.70 EUR
1000+0.64 EUR
2000+0.59 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TPN2R805PL,L1Q TPN2R805PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN2R805PL_datasheet_en_20191030.pdf?did=53831&prodName=TPN2R805PL Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
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