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TPN2R903PL,L1Q

TPN2R903PL,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=55425&prodName=TPN2R903PL
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.51 EUR
10000+0.48 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN2R903PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 70A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V, Power Dissipation (Max): 630mW (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V.

Weitere Produktangebote TPN2R903PL,L1Q nach Preis ab 0.49 EUR bis 2.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TPN2R903PL,L1Q TPN2R903PL,L1Q Toshiba 175409E5C364D570C9885B5FBE9CBEEACA485265A67F1077DFEFB669EE1B69C9.pdf MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 12518 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.64 EUR
10+1.24 EUR
100+0.82 EUR
500+0.68 EUR
1000+0.57 EUR
5000+0.49 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPN2R903PL,L1Q TPN2R903PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55425&prodName=TPN2R903PL Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 24105 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
16+1.37 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.58 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPN2R903PL,L1Q 175409E5C364D570C9885B5FBE9CBEEACA485265A67F1077DFEFB669EE1B69C9.pdf
TPN2R903PL,L1Q
Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 12518 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.64 EUR
10+1.24 EUR
100+0.82 EUR
500+0.68 EUR
1000+0.57 EUR
5000+0.49 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPN2R903PL,L1Q docget.jsp?did=55425&prodName=TPN2R903PL
TPN2R903PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 24105 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.2 EUR
16+1.37 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.58 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH