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TPN30008NH,LQ

TPN30008NH,LQ Toshiba

TPN30008NH_datasheet_en_20140218-1140019.pdf Hersteller: Toshiba
MOSFETs N-Ch 80V 22A 27W UMOSVIII 710pF 11nC
auf Bestellung 14661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.09 EUR
10+1.47 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.79 EUR
3000+0.70 EUR
Mindestbestellmenge: 2
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Technische Details TPN30008NH,LQ Toshiba

Description: MOSFET N-CH 80V 9.6A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V, Power Dissipation (Max): 700mW (Ta), 27W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-TSON Advance (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V.

Weitere Produktangebote TPN30008NH,LQ nach Preis ab 0.67 EUR bis 2.27 EUR

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TPN30008NH,LQ TPN30008NH,LQ Hersteller : Toshiba Semiconductor and Storage TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
auf Bestellung 2735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
13+1.42 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TPN30008NH,LQ TPN30008NH,LQ Hersteller : Toshiba Semiconductor and Storage TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
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Im Einkaufswagen  Stück im Wert von  UAH