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TPN3300ANH,LQ

TPN3300ANH,LQ Toshiba

TPN3300ANH_datasheet_en_20140218-1139997.pdf Hersteller: Toshiba
MOSFETs N-Ch 100V 21A 27W UMOSVIII 680pF 11nC
auf Bestellung 25342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.06 EUR
10+1.34 EUR
100+0.91 EUR
500+0.76 EUR
1000+0.7 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN3300ANH,LQ Toshiba

Description: MOSFET N-CH 100V 9.4A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V, Power Dissipation (Max): 700mW (Ta), 27W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-TSON Advance (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V.

Weitere Produktangebote TPN3300ANH,LQ nach Preis ab 0.68 EUR bis 2.29 EUR

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TPN3300ANH,LQ TPN3300ANH,LQ Hersteller : Toshiba Semiconductor and Storage TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 4306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
13+1.44 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TPN3300ANH,LQ Hersteller : Toshiba 319tpn3300anh_datasheet_en_20140218.pdf.pdf Trans MOSFET N-CH Si 100V 21A 8-Pin TSON Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN3300ANH,LQ TPN3300ANH,LQ Hersteller : Toshiba 319tpn3300anh_datasheet_en_20140218.pdf.pdf Trans MOSFET N-CH Si 100V 21A 8-Pin TSON Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN3300ANH,LQ TPN3300ANH,LQ Hersteller : Toshiba 319tpn3300anh_datasheet_en_20140218.pdf.pdf Trans MOSFET N-CH Si 100V 21A 8-Pin TSON Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN3300ANH,LQ TPN3300ANH,LQ Hersteller : Toshiba Semiconductor and Storage TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH