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TPN3300ANH,LQ

TPN3300ANH,LQ Toshiba Semiconductor and Storage

TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.88 EUR
6000+ 0.84 EUR
9000+ 0.8 EUR
Mindestbestellmenge: 3000
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Technische Details TPN3300ANH,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 9.4A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V, Power Dissipation (Max): 700mW (Ta), 27W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-TSON Advance (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V.

Weitere Produktangebote TPN3300ANH,LQ nach Preis ab 0.81 EUR bis 2.11 EUR

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TPN3300ANH,LQ TPN3300ANH,LQ Hersteller : Toshiba TPN3300ANH_datasheet_en_20140218-1139997.pdf MOSFET N-Ch 100V 21A 27W UMOSVIII 680pF 11nC
auf Bestellung 31684 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.08 EUR
31+ 1.71 EUR
100+ 1.33 EUR
500+ 1.12 EUR
1000+ 0.92 EUR
3000+ 0.81 EUR
Mindestbestellmenge: 25
TPN3300ANH,LQ TPN3300ANH,LQ Hersteller : Toshiba Semiconductor and Storage TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 15884 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.11 EUR
15+ 1.74 EUR
100+ 1.35 EUR
500+ 1.15 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 13
TPN3300ANH,LQ Hersteller : Toshiba 319tpn3300anh_datasheet_en_20140218.pdf.pdf Trans MOSFET N-CH Si 100V 21A 8-Pin TSON Advance T/R
Produkt ist nicht verfügbar
TPN3300ANH,LQ TPN3300ANH,LQ Hersteller : Toshiba 319tpn3300anh_datasheet_en_20140218.pdf.pdf Trans MOSFET N-CH Si 100V 21A 8-Pin TSON Advance T/R
Produkt ist nicht verfügbar
TPN3300ANH,LQ TPN3300ANH,LQ Hersteller : Toshiba 319tpn3300anh_datasheet_en_20140218.pdf.pdf Trans MOSFET N-CH Si 100V 21A 8-Pin TSON Advance T/R
Produkt ist nicht verfügbar