Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TPN3R704PL,L1Q
TPN3R704PL,L1Q

TPN3R704PL,L1Q Toshiba Semiconductor and Storage

TPN3R704PL_datasheet_en_20191030.pdf?did=30643&prodName=TPN3R704PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.64 EUR
10000+ 0.59 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details TPN3R704PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 80A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V, Power Dissipation (Max): 630mW (Ta), 86W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V.

Weitere Produktangebote TPN3R704PL,L1Q nach Preis ab 0.65 EUR bis 1.79 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TPN3R704PL,L1Q TPN3R704PL,L1Q Hersteller : Toshiba TPN3R704PL_datasheet_en_20191030-1916470.pdf MOSFET 40 Volt N-Channel
auf Bestellung 4071 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
31+1.72 EUR
35+ 1.5 EUR
100+ 1.06 EUR
500+ 0.89 EUR
1000+ 0.68 EUR
5000+ 0.65 EUR
Mindestbestellmenge: 31
TPN3R704PL,L1Q TPN3R704PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN3R704PL_datasheet_en_20191030.pdf?did=30643&prodName=TPN3R704PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 34201 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.79 EUR
17+ 1.54 EUR
100+ 1.07 EUR
500+ 0.89 EUR
1000+ 0.76 EUR
2000+ 0.68 EUR
Mindestbestellmenge: 15
TPN3R704PL,L1Q Hersteller : Toshiba tpn3r704pl_datasheet_en_20191030.pdf Trans MOSFET N-CH Si 40V 92A 8-Pin TSON Advance
Produkt ist nicht verfügbar