TPN4R203NC,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N CH 30V 23A 8TSON-ADV, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Power Dissipation (Max): 700mW (Ta), 22W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).