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TPN4R712MD,L1Q

TPN4R712MD,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=28741&prodName=TPN4R712MD Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.47 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN4R712MD,L1Q Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 36A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V.

Weitere Produktangebote TPN4R712MD,L1Q nach Preis ab 0.46 EUR bis 1.95 EUR

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TPN4R712MD,L1Q TPN4R712MD,L1Q Hersteller : Toshiba TPN4R712MD_datasheet_en_20191030-1916409.pdf MOSFET P-Channel Mosfet 20V UMOS-VI
auf Bestellung 12022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.33 EUR
10+1.16 EUR
100+0.8 EUR
500+0.67 EUR
1000+0.51 EUR
5000+0.48 EUR
10000+0.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TPN4R712MD,L1Q TPN4R712MD,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=28741&prodName=TPN4R712MD Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 9110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.22 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH