TPN4R712MD,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.47 EUR |
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Technische Details TPN4R712MD,L1Q Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V.
Weitere Produktangebote TPN4R712MD,L1Q nach Preis ab 0.5 EUR bis 1.96 EUR
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TPN4R712MD,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 36A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V |
auf Bestellung 7072 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN4R712MD,L1Q | Hersteller : Toshiba |
MOSFET P-Channel Mosfet 20V UMOS-VI |
auf Bestellung 12022 Stücke: Lieferzeit 14-28 Tag (e) |
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