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TPN4R806PL,L1Q

TPN4R806PL,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=55571&prodName=TPN4R806PL
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.61 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN4R806PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 72A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Power Dissipation (Max): 630mW (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote TPN4R806PL,L1Q nach Preis ab 0.61 EUR bis 2.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TPN4R806PL,L1Q TPN4R806PL,L1Q Toshiba A080D8DB7C83F39C60E2B47BCBA4345B15F86C3FC8A6F9534A1D56BD131A8820.pdf MOSFETs TSON N-CH 60V 72A
auf Bestellung 4605 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.31 EUR
10+1.61 EUR
100+1.04 EUR
500+0.83 EUR
1000+0.71 EUR
2500+0.69 EUR
5000+0.61 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPN4R806PL,L1Q TPN4R806PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55571&prodName=TPN4R806PL Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
auf Bestellung 9228 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.56 EUR
14+1.61 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.71 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPN4R806PL,L1Q A080D8DB7C83F39C60E2B47BCBA4345B15F86C3FC8A6F9534A1D56BD131A8820.pdf
TPN4R806PL,L1Q
Hersteller: Toshiba
MOSFETs TSON N-CH 60V 72A
auf Bestellung 4605 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.31 EUR
10+1.61 EUR
100+1.04 EUR
500+0.83 EUR
1000+0.71 EUR
2500+0.69 EUR
5000+0.61 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPN4R806PL,L1Q docget.jsp?did=55571&prodName=TPN4R806PL
TPN4R806PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
auf Bestellung 9228 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.56 EUR
14+1.61 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.71 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH