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TPN4R806PL,L1Q

TPN4R806PL,L1Q Toshiba Semiconductor and Storage

TPN4R806PL_datasheet_en_20191018.pdf?did=55571&prodName=TPN4R806PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.55 EUR
10000+0.52 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN4R806PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 72A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V, Power Dissipation (Max): 630mW (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V.

Weitere Produktangebote TPN4R806PL,L1Q nach Preis ab 0.53 EUR bis 2.24 EUR

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TPN4R806PL,L1Q TPN4R806PL,L1Q Hersteller : Toshiba TPN4R806PL_datasheet_en_20191018-1568561.pdf MOSFETs TSON N CHAN 60V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.02 EUR
10+1.41 EUR
100+0.91 EUR
500+0.73 EUR
1000+0.63 EUR
2500+0.61 EUR
5000+0.53 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPN4R806PL,L1Q TPN4R806PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN4R806PL_datasheet_en_20191018.pdf?did=55571&prodName=TPN4R806PL Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
auf Bestellung 11717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.41 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
2000+0.61 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH