Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TPN5900CNH,L1Q
TPN5900CNH,L1Q

TPN5900CNH,L1Q Toshiba Semiconductor and Storage

TPN5900CNH_datasheet_en_20140227.pdf?did=14560&prodName=TPN5900CNH Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 4756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.15 EUR
11+ 1.75 EUR
100+ 1.36 EUR
500+ 1.16 EUR
1000+ 0.94 EUR
2000+ 0.89 EUR
Mindestbestellmenge: 9
Produktrezensionen
Produktbewertung abgeben

Technische Details TPN5900CNH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 150V 9A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V, Power Dissipation (Max): 700mW (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V.

Weitere Produktangebote TPN5900CNH,L1Q nach Preis ab 1.21 EUR bis 3.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TPN5900CNH,L1Q TPN5900CNH,L1Q Hersteller : Toshiba TPN5900CNH_datasheet_en_20140227-1916284.pdf MOSFET UMOSVIII 150V 59mOhm (VGS=10V) TSON-ADV
auf Bestellung 5271 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
17+3.12 EUR
21+ 2.56 EUR
100+ 1.98 EUR
500+ 1.68 EUR
1000+ 1.29 EUR
5000+ 1.22 EUR
10000+ 1.21 EUR
Mindestbestellmenge: 17
TPN5900CNH,L1Q TPN5900CNH,L1Q Hersteller : Toshiba 505docget.jsplangenpidtpn5900cnhtypedatasheet.jsplangenpidtpn5900cnh.pdf Trans MOSFET N-CH Si 150V 18A 8-Pin TSON EP Advance T/R
Produkt ist nicht verfügbar
TPN5900CNH,L1Q TPN5900CNH,L1Q Hersteller : Toshiba Semiconductor and Storage TPN5900CNH_datasheet_en_20140227.pdf?did=14560&prodName=TPN5900CNH Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Produkt ist nicht verfügbar