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TPN5900CNH,L1Q

TPN5900CNH,L1Q Toshiba


TPN5900CNH_datasheet_en_20140227-1916284.pdf Hersteller: Toshiba
MOSFETs UMOSVIII 150V 59mOhm (VGS=10V) TSON-ADV
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Technische Details TPN5900CNH,L1Q Toshiba

Description: MOSFET N-CH 150V 9A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V, Power Dissipation (Max): 700mW (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V.

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TPN5900CNH,L1Q TPN5900CNH,L1Q Hersteller : Toshiba 505docget.jsplangenpidtpn5900cnhtypedatasheet.jsplangenpidtpn5900cnh.pdf Trans MOSFET N-CH Si 150V 18A 8-Pin TSON EP Advance T/R
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TPN5900CNH,L1Q TPN5900CNH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14560&prodName=TPN5900CNH Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN5900CNH,L1Q TPN5900CNH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14560&prodName=TPN5900CNH Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH