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TPN5R203PL,LQ

TPN5R203PL,LQ Toshiba Semiconductor and Storage

docget.jsp?did=55524&prodName=TPN5R203PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN5R203PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 38A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V, Power Dissipation (Max): 610mW (Ta), 61W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V.

Weitere Produktangebote TPN5R203PL,LQ nach Preis ab 0.4 EUR bis 1.8 EUR

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TPN5R203PL,LQ TPN5R203PL,LQ Hersteller : Toshiba TPN5R203PL_datasheet_en_20170420-1568603.pdf MOSFETs Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=61W F=1MHZ
auf Bestellung 3565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.44 EUR
10+1.07 EUR
100+0.72 EUR
500+0.57 EUR
1000+0.52 EUR
3000+0.4 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPN5R203PL,LQ TPN5R203PL,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=55524&prodName=TPN5R203PL Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 19796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.12 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH