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TPN7R006PL,L1Q

TPN7R006PL,L1Q Toshiba Semiconductor and Storage

TPN7R006PL_datasheet_en_20191018.pdf?did=53588&prodName=TPN7R006PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
auf Bestellung 5532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.39 EUR
100+ 1.12 EUR
500+ 0.95 EUR
1000+ 0.77 EUR
2000+ 0.73 EUR
Mindestbestellmenge: 13
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Technische Details TPN7R006PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 54A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V, Power Dissipation (Max): 630mW (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V.

Weitere Produktangebote TPN7R006PL,L1Q nach Preis ab 0.82 EUR bis 2.06 EUR

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TPN7R006PL,L1Q TPN7R006PL,L1Q Hersteller : Toshiba TPN7R006PL_datasheet_en_20191018-1568623.pdf MOSFET Pb-FPOWERMOSFETTRANSISTORTSON-ADVPD=75WF=1MHZ
auf Bestellung 24416 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.06 EUR
31+ 1.71 EUR
100+ 1.33 EUR
500+ 1.12 EUR
1000+ 0.87 EUR
2500+ 0.86 EUR
5000+ 0.82 EUR
Mindestbestellmenge: 26
TPN7R006PL,L1Q TPN7R006PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN7R006PL_datasheet_en_20191018.pdf?did=53588&prodName=TPN7R006PL Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
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