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TPN7R504PL,LQ

TPN7R504PL,LQ Toshiba Semiconductor and Storage

TPN7R504PL_datasheet_en_20170413.pdf?did=55436&prodName=TPN7R504PL
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.4 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN7R504PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 38A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 2.4V @ 200µA, Power Dissipation (Max): 610mW (Ta), 61W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote TPN7R504PL,LQ nach Preis ab 0.33 EUR bis 1.85 EUR

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TPN7R504PL,LQ TPN7R504PL,LQ Hersteller : Toshiba TPN7R504PL_datasheet_en_20170413-1568630.pdf MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 8840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.26 EUR
10+0.84 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
3000+0.36 EUR
6000+0.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TPN7R504PL,LQ TPN7R504PL,LQ Hersteller : Toshiba Semiconductor and Storage TPN7R504PL_datasheet_en_20170413.pdf?did=55436&prodName=TPN7R504PL Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH