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TPN7R506NH,L1Q

TPN7R506NH,L1Q Toshiba Semiconductor and Storage

TPN7R506NH_datasheet_en_20191030.pdf?did=13874&prodName=TPN7R506NH
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 7370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.69 EUR
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Technische Details TPN7R506NH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 26A 8TSON, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Part Status: Active, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 4V @ 200µA, Power Dissipation (Max): 700mW (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount.

Weitere Produktangebote TPN7R506NH,L1Q nach Preis ab 0.64 EUR bis 2.52 EUR

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Preis
TPN7R506NH,L1Q TPN7R506NH,L1Q Hersteller : Toshiba 293517C399761DA367D9B78A737D7242D58E0DE387642CD598DC4F574EC77EC6.pdf MOSFETs U-MOSVIII-H 30V 53A 24nC MOSFET
auf Bestellung 27116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.52 EUR
10+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.7 EUR
5000+0.64 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPN7R506NH,L1Q TPN7R506NH,L1Q Hersteller : Toshiba Semiconductor and Storage TPN7R506NH_datasheet_en_20191030.pdf?did=13874&prodName=TPN7R506NH Description: MOSFET N-CH 60V 26A 8TSON
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
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