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TPN7R506NH,L1Q

TPN7R506NH,L1Q Toshiba

TPN7R506NH_datasheet_en_20191030-1916233.pdf Hersteller: Toshiba
MOSFETs U-MOSVIII-H 30V 53A 24nC MOSFET
auf Bestellung 31816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.52 EUR
10+1.24 EUR
100+0.89 EUR
500+0.71 EUR
1000+0.61 EUR
Mindestbestellmenge: 2
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Technische Details TPN7R506NH,L1Q Toshiba

Description: MOSFET N-CH 60V 26A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V, Power Dissipation (Max): 700mW (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V.

Weitere Produktangebote TPN7R506NH,L1Q nach Preis ab 0.69 EUR bis 2.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TPN7R506NH,L1Q TPN7R506NH,L1Q Hersteller : Toshiba Semiconductor and Storage TPN7R506NH_datasheet_en_20191030.pdf?did=13874&prodName=TPN7R506NH Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 7370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.69 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TPN7R506NH,L1Q TPN7R506NH,L1Q Hersteller : Toshiba Semiconductor and Storage TPN7R506NH_datasheet_en_20191030.pdf?did=13874&prodName=TPN7R506NH Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
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Im Einkaufswagen  Stück im Wert von  UAH