Technische Details TPS1100D Texas Instruments
Description: MOSFET P-CH 15V 1.6A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V, Power Dissipation (Max): 791mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Vgs (Max): +2V, -15V, Drain to Source Voltage (Vdss): 15 V, Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V.
Weitere Produktangebote TPS1100D nach Preis ab 0.94 EUR bis 6.83 EUR
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TPS1100D | Texas Instruments |
 Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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TPS1100D | Texas Instruments |
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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TPS1100D | Texas Instruments |
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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TPS1100D | Texas Instruments |
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube |
auf Bestellung 825 Stücke: Lieferzeit 14-21 Tag (e) |
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TPS1100D | Texas Instruments |
Description: MOSFET P-CH 15V 1.6A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Power Dissipation (Max): 791mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs (Max): +2V, -15V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V |
auf Bestellung 7680 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS1100D | Texas Instruments |
Description: MOSFET P-CH 15V 1.6A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Power Dissipation (Max): 791mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs (Max): +2V, -15V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V |
auf Bestellung 346 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS1100D | Texas Instruments |
MOSFETs MOSFET 10ns RT A 595 -TPS1100DR A 595-TP A 595-TPS1100DR |
auf Bestellung 2356 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPS1100D | TI |
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auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TPS1100D |
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Hersteller: Texas Instruments
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 145+ | 1.2 EUR |
| TPS1100D |
|
Hersteller: Texas Instruments
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 145+ | 1.2 EUR |
| TPS1100D |
|
Hersteller: Texas Instruments
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 135+ | 1.3 EUR |
| 179+ | 0.94 EUR |
| TPS1100D |
|
Hersteller: Texas Instruments
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 119+ | 1.48 EUR |
| 150+ | 1.42 EUR |
| 300+ | 1.34 EUR |
| 525+ | 1.09 EUR |
| TPS1100D |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 15V 1.6A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Power Dissipation (Max): 791mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V
Description: MOSFET P-CH 15V 1.6A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Power Dissipation (Max): 791mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V
auf Bestellung 7680 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 360+ | 1.61 EUR |
| TPS1100D |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 15V 1.6A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Power Dissipation (Max): 791mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V
Description: MOSFET P-CH 15V 1.6A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Power Dissipation (Max): 791mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V
auf Bestellung 346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.34 EUR |
| 75+ | 1.88 EUR |
| 150+ | 1.55 EUR |
| TPS1100D |
|
Hersteller: Texas Instruments
MOSFETs MOSFET 10ns RT A 595 -TPS1100DR A 595-TP A 595-TPS1100DR
MOSFETs MOSFET 10ns RT A 595 -TPS1100DR A 595-TP A 595-TPS1100DR
auf Bestellung 2356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.83 EUR |
| 10+ | 3.17 EUR |
| 75+ | 2.45 EUR |
| 525+ | 2.28 EUR |
| TPS1100D |
|
Hersteller: TI
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)