TPS1100DR Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 15V 1.6A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Power Dissipation (Max): 791mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V
auf Bestellung 564 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 368+ | 1.44 EUR |
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Technische Details TPS1100DR Texas Instruments
Description: MOSFET P-CH 15V 1.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V, Power Dissipation (Max): 791mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Vgs (Max): +2V, -15V, Drain to Source Voltage (Vdss): 15 V, Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V.
Weitere Produktangebote TPS1100DR nach Preis ab 1.21 EUR bis 3.01 EUR
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TPS1100DR | Hersteller : Texas Instruments |
Description: MOSFET P-CH 15V 1.6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Power Dissipation (Max): 791mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs (Max): +2V, -15V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V |
Produkt ist nicht verfügbar |