TPS1120D Texas Instruments
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 82+ | 1.78 EUR |
| 300+ | 1.69 EUR |
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Technische Details TPS1120D Texas Instruments
Description: MOSFET 2P-CH 15V 1.17A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW, Drain to Source Voltage (Vdss): 15V, Current - Continuous Drain (Id) @ 25°C: 1.17A, Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote TPS1120D nach Preis ab 1.74 EUR bis 5.46 EUR
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TPS1120D | Hersteller : Texas Instruments |
 Description: MOSFET 2P-CH 15V 1.17A 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.17A Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 2670 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS1120D | Hersteller : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -15V; -0.53A; Idm: 7A; SO8; ESD Mounting: SMD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -15V Drain current: -530mA Gate charge: 5.45nC On-state resistance: 0.18Ω Pulsed drain current: 7A Gate-source voltage: ±15V Kind of package: tube Case: SO8 Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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TPS1120D | Hersteller : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -15V; -0.53A; Idm: 7A; SO8; ESD Mounting: SMD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -15V Drain current: -530mA Gate charge: 5.45nC On-state resistance: 0.18Ω Pulsed drain current: 7A Gate-source voltage: ±15V Kind of package: tube Case: SO8 Kind of channel: enhancement Version: ESD |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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TPS1120D | Hersteller : Texas Instruments |
MOSFETs Dual P-Ch Enh-Mode M OSFET A 595-TPS1120DR |
auf Bestellung 745 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS1120D | Hersteller : Texas Instruments |
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC Tube |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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| TPS1120D | Hersteller : TI |
05+ |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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| TPS1120D | Hersteller : TI/BB |
09+ |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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| TPS1120D | Hersteller : TI/BB |
2004+ SOIC-8 |
auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) |
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TPS1120D | Hersteller : Texas Instruments |
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC Tube |
Produkt ist nicht verfügbar |
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TPS1120D | Hersteller : Texas Instruments |
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC Tube |
Produkt ist nicht verfügbar |
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TPS1120D | Hersteller : Texas Instruments |
Description: MOSFET 2P-CH 15V 1.17A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.17A Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |