TPS1120D Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET 2P-CH 15V 1.17A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 1.17A
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
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Technische Details TPS1120D Texas Instruments
Description: MOSFET 2P-CH 15V 1.17A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW, Drain to Source Voltage (Vdss): 15V, Current - Continuous Drain (Id) @ 25°C: 1.17A, Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote TPS1120D nach Preis ab 1.99 EUR bis 7.48 EUR
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TPS1120D | TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -15V; -0.53A; Idm: 7A; SO8; ESD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET x2 Kind of package: tube Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -15V Drain current: -530mA Gate charge: 5.45nC On-state resistance: 0.18Ω Pulsed drain current: 7A Gate-source voltage: ±15V |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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TPS1120D | Texas Instruments |
MOSFETs Dual P-Ch Enh-Mode M OSFET A 595-TPS1120 A 595-TPS1120DR |
auf Bestellung 624 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPS1120D | TI |
05+ |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TPS1120D |
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Hersteller: TEXAS INSTRUMENTS
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -15V; -0.53A; Idm: 7A; SO8; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET x2
Kind of package: tube
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -530mA
Gate charge: 5.45nC
On-state resistance: 0.18Ω
Pulsed drain current: 7A
Gate-source voltage: ±15V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -15V; -0.53A; Idm: 7A; SO8; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET x2
Kind of package: tube
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -530mA
Gate charge: 5.45nC
On-state resistance: 0.18Ω
Pulsed drain current: 7A
Gate-source voltage: ±15V
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 3.2 EUR |
| 29+ | 2.55 EUR |
| 75+ | 1.99 EUR |
| TPS1120D |
|
Hersteller: Texas Instruments
MOSFETs Dual P-Ch Enh-Mode M OSFET A 595-TPS1120 A 595-TPS1120DR
MOSFETs Dual P-Ch Enh-Mode M OSFET A 595-TPS1120 A 595-TPS1120DR
auf Bestellung 624 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.48 EUR |
| 10+ | 4.91 EUR |
| 75+ | 3.64 EUR |
| 525+ | 3.04 EUR |
| 1050+ | 2.83 EUR |
| 3000+ | 2.68 EUR |
| TPS1120D |
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Hersteller: TI
05+
05+
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)