TPS1120DR Texas Instruments
| Anzahl | Privatkunde |
|---|---|
| 84+ | 2.08 EUR |
| 91+ | 1.77 EUR |
| 101+ | 1.54 EUR |
| 250+ | 1.31 EUR |
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Technische Details TPS1120DR Texas Instruments
Description: MOSFET 2P-CH 15V 1.17A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW, Drain to Source Voltage (Vdss): 15V, Current - Continuous Drain (Id) @ 25°C: 1.17A, Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote TPS1120DR nach Preis ab 1.42 EUR bis 6.34 EUR
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TPS1120DR | Texas Instruments |
 Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R |
auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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TPS1120DR | Texas Instruments |
Description: MOSFET 2P-CH 15V 1.17A 8SOIC Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.17A Drain to Source Voltage (Vdss): 15V Power - Max: 840mW Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 718 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS1120DR | Texas Instruments |
MOSFETs Dual P-Ch Enh-Mode M OSFET A 595-TPS1120 A 595-TPS1120D |
auf Bestellung 913 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPS1120DR | TI |
0601+ ORIGINAL |
auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TPS1120DR |
|
Hersteller: Texas Instruments
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 2.08 EUR |
| 91+ | 1.84 EUR |
| 101+ | 1.63 EUR |
| 250+ | 1.42 EUR |
| TPS1120DR |
|
Hersteller: Texas Instruments
Description: MOSFET 2P-CH 15V 1.17A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.17A
Drain to Source Voltage (Vdss): 15V
Power - Max: 840mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 15V 1.17A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.17A
Drain to Source Voltage (Vdss): 15V
Power - Max: 840mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 718 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.99 EUR |
| 10+ | 3.14 EUR |
| 100+ | 2.28 EUR |
| 500+ | 2.21 EUR |
| TPS1120DR |
|
Hersteller: Texas Instruments
MOSFETs Dual P-Ch Enh-Mode M OSFET A 595-TPS1120 A 595-TPS1120D
MOSFETs Dual P-Ch Enh-Mode M OSFET A 595-TPS1120 A 595-TPS1120D
auf Bestellung 913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.34 EUR |
| 10+ | 4.11 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.53 EUR |
| 1000+ | 2.37 EUR |
| 2500+ | 2.2 EUR |
| TPS1120DR |
|
Hersteller: TI
0601+ ORIGINAL
0601+ ORIGINAL
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)