TPS1120DR Texas Instruments
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 84+ | 1.77 EUR |
| 91+ | 1.51 EUR |
| 101+ | 1.31 EUR |
| 250+ | 1.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPS1120DR Texas Instruments
Description: MOSFET 2P-CH 15V 1.17A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW, Drain to Source Voltage (Vdss): 15V, Current - Continuous Drain (Id) @ 25°C: 1.17A, Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote TPS1120DR nach Preis ab 1.11 EUR bis 5.03 EUR
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TPS1120DR | Hersteller : Texas Instruments |
 Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R |
auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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TPS1120DR | Hersteller : Texas Instruments |
MOSFETs Dual P-Ch Enh-Mode M OSFET A 595-TPS1120D |
auf Bestellung 2598 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS1120DR | Hersteller : Texas Instruments |
Description: MOSFET 2P-CH 15V 1.17A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.17A Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 718 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPS1120DR | Hersteller : TI |
0601+ ORIGINAL |
auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) |
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TPS1120DR | Hersteller : Texas Instruments |
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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TPS1120DR | Hersteller : Texas Instruments |
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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|
TPS1120DR | Hersteller : Texas Instruments |
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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TPS1120DR | Hersteller : Texas Instruments |
Description: MOSFET 2P-CH 15V 1.17A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.17A Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |