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TPS1120DR

TPS1120DR Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Ftps1120 Hersteller: Texas Instruments
MOSFET Dual P-Ch Enh-Mode MOSFET
auf Bestellung 2837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.66 EUR
10+ 2.31 EUR
100+ 1.95 EUR
250+ 1.87 EUR
500+ 1.69 EUR
1000+ 1.6 EUR
2500+ 1.52 EUR
Mindestbestellmenge: 2
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Technische Details TPS1120DR Texas Instruments

Description: MOSFET 2P-CH 15V 1.17A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW, Drain to Source Voltage (Vdss): 15V, Current - Continuous Drain (Id) @ 25°C: 1.17A, Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

Weitere Produktangebote TPS1120DR nach Preis ab 1.84 EUR bis 3.29 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TPS1120DR TPS1120DR Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Ftps1120 Description: MOSFET 2P-CH 15V 1.17A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 1.17A
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.29 EUR
10+ 2.73 EUR
100+ 2.17 EUR
500+ 1.84 EUR
Mindestbestellmenge: 6
TPS1120DR Hersteller : TI suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Ftps1120 0601+ ORIGINAL
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)
TPS1120DR TPS1120DR Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Ftps1120 Description: MOSFET 2P-CH 15V 1.17A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 1.17A
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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