TPW1500CNH,L1Q Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DSO, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-DSOP Advance, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 800mW (Ta), 142W (Tc), Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).