TPW1500CNH,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.72 EUR |
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Technische Details TPW1500CNH,L1Q Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-DSOP Advance, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 800mW (Ta), 142W (Tc), Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPW1500CNH,L1Q nach Preis ab 1.85 EUR bis 5.33 EUR
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TPW1500CNH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DSO Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-DSOP Advance Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 800mW (Ta), 142W (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 6246 Stücke: Lieferzeit 10-14 Tag (e) |
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TPW1500CNH,L1Q | Hersteller : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR |
auf Bestellung 14808 Stücke: Lieferzeit 10-14 Tag (e) |
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