auf Bestellung 6952 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.26 EUR |
| 10+ | 4.05 EUR |
| 25+ | 3.85 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.29 EUR |
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Technische Details TPW1R005PL,L1Q Toshiba
Description: MOSFET N-CH 45V 300A 8DSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: 8-DSOP Advance, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V.
Weitere Produktangebote TPW1R005PL,L1Q nach Preis ab 2.55 EUR bis 6.16 EUR
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TPW1R005PL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 45V 300A 8DSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-DSOP Advance Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V |
auf Bestellung 884 Stücke: Lieferzeit 10-14 Tag (e) |
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TPW1R005PL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 300A 8DSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-DSOP Advance Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |