TPW1R104PB,L1XHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
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Technische Details TPW1R104PB,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: 8-DSOP Advance, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote TPW1R104PB,L1XHQ nach Preis ab 1.18 EUR bis 3.64 EUR
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TPW1R104PB,L1XHQ | Toshiba |
MOSFETs 132W 1MHz Automotive; AEC-Q101 |
auf Bestellung 19865 Stücke: Lieferzeit 10-14 Tag (e) |
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TPW1R104PB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 120A 8DSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: 8-DSOP Advance Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 9374 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPW1R104PB,L1XHQ |
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Hersteller: Toshiba
MOSFETs 132W 1MHz Automotive; AEC-Q101
MOSFETs 132W 1MHz Automotive; AEC-Q101
auf Bestellung 19865 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.26 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.3 EUR |
| 2500+ | 1.25 EUR |
| 5000+ | 1.18 EUR |
| TPW1R104PB,L1XHQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9374 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 11+ | 2.08 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.39 EUR |