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TPW1R104PB,L1XHQ

TPW1R104PB,L1XHQ Toshiba Semiconductor and Storage

TPW1R104PB_datasheet_en_20200624.pdf?did=62007&prodName=TPW1R104PB Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPW1R104PB,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 120A 8DSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: 8-DSOP Advance, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V.

Weitere Produktangebote TPW1R104PB,L1XHQ nach Preis ab 1.11 EUR bis 3.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TPW1R104PB,L1XHQ TPW1R104PB,L1XHQ Hersteller : Toshiba TPW1R104PB_datasheet_en_20200624-1858378.pdf MOSFETs 132W 1MHz Automotive; AEC-Q101
auf Bestellung 19865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.20 EUR
10+1.72 EUR
100+1.45 EUR
250+1.42 EUR
500+1.24 EUR
1000+1.19 EUR
2500+1.16 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ TPW1R104PB,L1XHQ Hersteller : Toshiba Semiconductor and Storage TPW1R104PB_datasheet_en_20200624.pdf?did=62007&prodName=TPW1R104PB Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
auf Bestellung 24500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+2.40 EUR
100+1.63 EUR
500+1.31 EUR
1000+1.20 EUR
2000+1.11 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ TPW1R104PB,L1XHQ Hersteller : Toshiba tpw1r104pb_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 40V 120A 8-Pin DSOP Advance(WF)M T/R
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Im Einkaufswagen  Stück im Wert von  UAH