TPW1R306PL,L1Q

TPW1R306PL,L1Q Toshiba Semiconductor and Storage


docget.jsp?did=55843&prodName=TPW1R306PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 260A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.29mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.86 EUR
Mindestbestellmenge: 5000
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Technische Details TPW1R306PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 260A 8DSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), Rds On (Max) @ Id, Vgs: 1.29mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-DSOP Advance, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V.

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TPW1R306PL,L1Q TPW1R306PL,L1Q Hersteller : Toshiba TPW1R306PL_datasheet_en_20191021-1915914.pdf MOSFETs POWER MOSFET TRANSISTOR PD=170W
auf Bestellung 10779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.86 EUR
10+3.43 EUR
100+2.66 EUR
250+2.59 EUR
500+2.20 EUR
1000+2.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R306PL,L1Q TPW1R306PL,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=55843&prodName=TPW1R306PL Description: MOSFET N-CH 60V 260A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.29mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 9989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
10+3.47 EUR
100+2.34 EUR
500+2.27 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH