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TPW2900ENH,L1Q

TPW2900ENH,L1Q Toshiba Semiconductor and Storage

TPW2900ENH_datasheet_en_20191030.pdf?did=30357&prodName=TPW2900ENH Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4850 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.89 EUR
10+ 5.72 EUR
100+ 4.55 EUR
500+ 3.85 EUR
1000+ 3.27 EUR
2000+ 3.11 EUR
Mindestbestellmenge: 4
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Technische Details TPW2900ENH,L1Q Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V, Power Dissipation (Max): 800mW (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-DSOP Advance, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V.

Weitere Produktangebote TPW2900ENH,L1Q nach Preis ab 3.12 EUR bis 6.94 EUR

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Preis ohne MwSt
TPW2900ENH,L1Q TPW2900ENH,L1Q Hersteller : Toshiba TPW2900ENH_datasheet_en_20191030-1568571.pdf MOSFET POWER MOSFET TRANSISTOR
auf Bestellung 5103 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.94 EUR
10+ 5.77 EUR
100+ 4.6 EUR
250+ 4.26 EUR
500+ 3.85 EUR
1000+ 3.67 EUR
5000+ 3.12 EUR
Mindestbestellmenge: 8
TPW2900ENH,L1Q TPW2900ENH,L1Q Hersteller : Toshiba Semiconductor and Storage TPW2900ENH_datasheet_en_20191030.pdf?did=30357&prodName=TPW2900ENH Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
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