TPW2900ENH,L1Q

TPW2900ENH,L1Q Toshiba Semiconductor and Storage


docget.jsp?did=30357&prodName=TPW2900ENH Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.06 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPW2900ENH,L1Q Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V, Power Dissipation (Max): 800mW (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-DSOP Advance, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V.

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TPW2900ENH,L1Q TPW2900ENH,L1Q Hersteller : Toshiba TPW2900ENH_datasheet_en_20191030-1568571.pdf MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.86 EUR
10+3.57 EUR
100+2.59 EUR
500+2.22 EUR
1000+2.11 EUR
5000+2.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPW2900ENH,L1Q TPW2900ENH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=30357&prodName=TPW2900ENH Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 9976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
10+3.91 EUR
100+3.11 EUR
500+2.52 EUR
1000+2.18 EUR
2000+2.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH