Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TPW2R508NH,L1Q
TPW2R508NH,L1Q

TPW2R508NH,L1Q Toshiba Semiconductor and Storage

TPW2R508NH_datasheet_en_20191021.pdf?did=36850&prodName=TPW2R508NH Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
auf Bestellung 1565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.82 EUR
10+ 3.16 EUR
100+ 2.52 EUR
500+ 2.13 EUR
1000+ 1.81 EUR
Mindestbestellmenge: 5
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Technische Details TPW2R508NH,L1Q Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DOS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V, Power Dissipation (Max): 800mW (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-DSOP Advance, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V.

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TPW2R508NH,L1Q TPW2R508NH,L1Q Hersteller : Toshiba TPW2R508NH_datasheet_en_20191021-1568536.pdf MOSFET POWER MOSFET TRANSISTOR
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.89 EUR
10+ 3.24 EUR
100+ 2.59 EUR
250+ 2.39 EUR
500+ 2.16 EUR
1000+ 2.11 EUR
5000+ 1.78 EUR
TPW2R508NH,L1Q TPW2R508NH,L1Q Hersteller : Toshiba Semiconductor and Storage TPW2R508NH_datasheet_en_20191021.pdf?did=36850&prodName=TPW2R508NH Description: PB-F POWER MOSFET TRANSISTOR DOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
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