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TPW3R70APL,L1Q

TPW3R70APL,L1Q Toshiba

TPW3R70APL_datasheet_en_20191021-1568588.pdf Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 5299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.02 EUR
10+3.71 EUR
100+2.62 EUR
500+2.15 EUR
1000+1.99 EUR
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Technische Details TPW3R70APL,L1Q Toshiba

Description: PB-F POWER MOSFET TRANSISTOR DSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-DSOP Advance, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V.

Weitere Produktangebote TPW3R70APL,L1Q nach Preis ab 2.32 EUR bis 5.60 EUR

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TPW3R70APL,L1Q TPW3R70APL,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=59527&prodName=TPW3R70APL Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 3799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.60 EUR
10+3.78 EUR
100+2.63 EUR
500+2.32 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TPW3R70APL,L1Q TPW3R70APL,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=59527&prodName=TPW3R70APL Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
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Im Einkaufswagen  Stück im Wert von  UAH