TPW5200FNH,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4826 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.61 EUR |
| 10+ | 3.82 EUR |
| 100+ | 3.04 EUR |
| 500+ | 2.58 EUR |
| 1000+ | 2.18 EUR |
| 2000+ | 2.08 EUR |
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Technische Details TPW5200FNH,L1Q Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V, Power Dissipation (Max): 800mW (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-DSOP Advance, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V.
Weitere Produktangebote TPW5200FNH,L1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| TPW5200FNH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DSO Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V Power Dissipation (Max): 800mW (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-DSOP Advance Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V |
Produkt ist nicht verfügbar |
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TPW5200FNH,L1Q | Hersteller : Toshiba |
MOSFET POWER MOSFET TRANSISTOR |
Produkt ist nicht verfügbar |