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TPWR6003PL,L1Q

TPWR6003PL,L1Q Toshiba Semiconductor and Storage

TPWR6003PL_datasheet_en_20191021.pdf?did=36851&prodName=TPWR6003PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 14886 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+3.3 EUR
Mindestbestellmenge: 5000
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Technische Details TPWR6003PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 150A 8DSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: 8-DSOP Advance, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V.

Weitere Produktangebote TPWR6003PL,L1Q nach Preis ab 3.44 EUR bis 7.1 EUR

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TPWR6003PL,L1Q TPWR6003PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPWR6003PL_datasheet_en_20191021.pdf?did=36851&prodName=TPWR6003PL Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 14886 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.05 EUR
10+ 5.94 EUR
100+ 4.8 EUR
500+ 4.27 EUR
1000+ 3.65 EUR
2000+ 3.44 EUR
Mindestbestellmenge: 4
TPWR6003PL,L1Q TPWR6003PL,L1Q Hersteller : Toshiba TPWR6003PL_datasheet_en_20191021-2509568.pdf MOSFET DSOP-ADV PD=170W 1MHz PWR MOSFET TRNS
auf Bestellung 51706 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.1 EUR
10+ 6.01 EUR
25+ 5.8 EUR
100+ 4.84 EUR
250+ 4.68 EUR
500+ 4.32 EUR
1000+ 3.48 EUR
Mindestbestellmenge: 8
TPWR6003PL,L1Q Hersteller : Toshiba tpwr6003pl_datasheet_en_20191021.pdf Trans MOSFET N-CH Si 30V 412A 8-Pin DSOP EP Advance T/R
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