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TPWR7904PB,L1XHQ

TPWR7904PB,L1XHQ Toshiba Semiconductor and Storage

TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.37 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPWR7904PB,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 150A 8DSOP, Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-DSOP Advance, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

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TPWR7904PB,L1XHQ TPWR7904PB,L1XHQ Hersteller : Toshiba TPWR7904PB_datasheet_en_20200624-1858383.pdf MOSFETs 170W 1MHz Automotive; AEC-Q101
auf Bestellung 9354 Stücke:
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1+3.73 EUR
10+2.69 EUR
100+2.16 EUR
250+1.99 EUR
500+1.81 EUR
1000+1.54 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
TPWR7904PB,L1XHQ TPWR7904PB,L1XHQ Hersteller : Toshiba Semiconductor and Storage TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB Description: MOSFET N-CH 40V 150A 8DSOP
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 6809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
10+2.9 EUR
100+2 EUR
500+1.61 EUR
1000+1.48 EUR
2000+1.38 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH