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TQM025NH04LCR RLG

TQM025NH04LCR RLG Taiwan Semiconductor Corporation

TQM025NH04LCR_B2309.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TQM025NH04LCR RLG Taiwan Semiconductor Corporation

Description: 40V, 100A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFNU (4.9x5.75), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote TQM025NH04LCR RLG nach Preis ab 1.53 EUR bis 4.96 EUR

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Preis
TQM025NH04LCR RLG TQM025NH04LCR RLG Hersteller : Taiwan Semiconductor TQM025NH04LCR_B2309.pdf MOSFETs 40V, 100A, Single N-Channel Power MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.5 EUR
10+2.92 EUR
100+2.32 EUR
250+2.15 EUR
500+1.95 EUR
1000+1.76 EUR
2500+1.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TQM025NH04LCR RLG TQM025NH04LCR RLG Hersteller : Taiwan Semiconductor Corporation TQM025NH04LCR_B2309.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
10+3.22 EUR
100+2.23 EUR
500+1.8 EUR
1000+1.66 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TQM025NH04LCR RLG Hersteller : TAIWAN SEMICONDUCTOR TQM025NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tape
Gate charge: 63.3nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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