TQM032NH04LCR RLG

TQM032NH04LCR RLG Taiwan Semiconductor Corporation


TQM032NH04LCR_C2309.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.15 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TQM032NH04LCR RLG Taiwan Semiconductor Corporation

Description: 40V, 81A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote TQM032NH04LCR RLG nach Preis ab 1.24 EUR bis 3.64 EUR

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Preis
TQM032NH04LCR RLG TQM032NH04LCR RLG Hersteller : Taiwan Semiconductor TQM032NH04LCR_C2309.pdf MOSFETs 40V, 81A, Single N-Channel Power MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.27 EUR
10+2.52 EUR
100+1.85 EUR
250+1.80 EUR
500+1.47 EUR
1000+1.35 EUR
2500+1.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TQM032NH04LCR RLG TQM032NH04LCR RLG Hersteller : Taiwan Semiconductor Corporation TQM032NH04LCR_C2309.pdf Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 7932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.57 EUR
100+1.78 EUR
500+1.43 EUR
1000+1.32 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TQM032NH04LCR RLG TQM032NH04LCR RLG Hersteller : Taiwan Semiconductor tqm032nh04lcr_a2302.pdf Trans MOSFET N-CH 40V 143A 8-Pin PDFN EP T/R Automotive AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TQM032NH04LCR RLG Hersteller : TAIWAN SEMICONDUCTOR TQM032NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: tape
Gate charge: 50nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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