TQM032NH04LCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.15 EUR |
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Technische Details TQM032NH04LCR RLG Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote TQM032NH04LCR RLG nach Preis ab 1.24 EUR bis 3.64 EUR
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TQM032NH04LCR RLG | Hersteller : Taiwan Semiconductor |
MOSFETs 40V, 81A, Single N-Channel Power MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM032NH04LCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: 40V, 81A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Qualification: AEC-Q101 |
auf Bestellung 7932 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM032NH04LCR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 143A 8-Pin PDFN EP T/R Automotive AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TQM032NH04LCR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U Drain-source voltage: 40V Drain current: 81A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Kind of package: tape Gate charge: 50nC Kind of channel: enhancement Gate-source voltage: ±16V Mounting: SMD Case: PDFN56U |
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