TQM056NH04CR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2912 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.94 EUR |
| 5000+ | 0.89 EUR |
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Technische Details TQM056NH04CR RLG Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V, Power Dissipation (Max): 78.9W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-PDFNU (4.9x5.75), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2912 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote TQM056NH04CR RLG nach Preis ab 0.89 EUR bis 2.62 EUR
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TQM056NH04CR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2912 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM056NH04CR RLG | Hersteller : Taiwan Semiconductor |
MOSFETs 40V, 54A, Single N-Channel Power MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM056NH04CR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 54A Automotive 8-Pin PDFN EP |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TQM056NH04CR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Power dissipation: 78.9W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 27.3nC Kind of package: tape Kind of channel: enhancement |
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