TQM076NH04DCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 15A/40A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 15A/40A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.19 EUR |
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Technische Details TQM076NH04DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 15A/40A 8PDFNU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 55.6W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V, Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-PDFNU (5x6), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote TQM076NH04DCR RLG nach Preis ab 1.25 EUR bis 6.39 EUR
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TQM076NH04DCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 15A/40A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 55.6W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM076NH04DCR RLG | Hersteller : Taiwan Semiconductor | MOSFET 40V, 40A, Dual N-Channel Power MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM076NH04DCR RLG | Hersteller : Taiwan Semiconductor |
 Trans MOSFET N-CH Si 40V 64A Automotive 8-Pin PDFN EP |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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TQM076NH04DCR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH Si 40V 64A Automotive AEC-Q101 8-Pin PDFN EP T/R |
Produkt ist nicht verfügbar |