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TQM076NH04LDCR RLG

TQM076NH04LDCR RLG Taiwan Semiconductor

TQM076NH04LDCR_C2309.pdf Hersteller: Taiwan Semiconductor
MOSFETs 40V, 40A, Dual N-Channel Power MOSFET
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2+2.68 EUR
10+2.22 EUR
100+1.76 EUR
250+1.62 EUR
500+1.47 EUR
1000+1.33 EUR
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Technische Details TQM076NH04LDCR RLG Taiwan Semiconductor

Description: MOSFET 2N-CH 40V 15A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 55.6W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V, Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote TQM076NH04LDCR RLG nach Preis ab 1.31 EUR bis 3.22 EUR

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TQM076NH04LDCR RLG TQM076NH04LDCR RLG Hersteller : Taiwan Semiconductor Corporation TQM076NH04LDCR_C2309.pdf Description: MOSFET 2N-CH 40V 15A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
10+2.47 EUR
100+1.78 EUR
500+1.43 EUR
1000+1.31 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TQM076NH04LDCR RLG TQM076NH04LDCR RLG Hersteller : Taiwan Semiconductor tqm076nh04ldcr_pa2203.pdf Trans MOSFET N-CH 40V 34A Automotive AEC-Q101 8-Pin PDFN EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
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TQM076NH04LDCR RLG TQM076NH04LDCR RLG Hersteller : Taiwan Semiconductor Corporation TQM076NH04LDCR_C2309.pdf Description: MOSFET 2N-CH 40V 15A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Qualification: AEC-Q101
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