TQM076NH04LDCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 15A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 6+ | 3.22 EUR |
| 10+ | 2.47 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.31 EUR |
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Technische Details TQM076NH04LDCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 15A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 55.6W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V, Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote TQM076NH04LDCR RLG nach Preis ab 1.18 EUR bis 3.66 EUR
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TQM076NH04LDCR RLG | Hersteller : Taiwan Semiconductor |
MOSFETs 40V, 40A, Dual N-Channel Power MOSFET |
auf Bestellung 898 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM076NH04LDCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 15A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 55.6W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Qualification: AEC-Q101 |
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