TQM130NB06CR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 10A/50A 8PDFNU
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2234 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.85 EUR |
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Technische Details TQM130NB06CR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 10A/50A 8PDFNU, Qualification: AEC-Q101, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Grade: Automotive, Supplier Device Package: 8-PDFNU (5x6), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2234 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V.
Weitere Produktangebote TQM130NB06CR RLG nach Preis ab 0.82 EUR bis 2.97 EUR
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TQM130NB06CR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 10A/50A 8PDFNU Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2234 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V |
auf Bestellung 3963 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM130NB06CR RLG | Hersteller : Taiwan Semiconductor | MOSFETs 60V, 50A, Single N-Channel Power MOSFET |
auf Bestellung 3845 Stücke: Lieferzeit 10-14 Tag (e) |
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