TQM138KDCU6 RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 0.32A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.32A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TQM138KDCU6 RFG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 0.32A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote TQM138KDCU6 RFG nach Preis ab 0.15 EUR bis 0.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TQM138KDCU6 RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 0.32A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| TQM138KDCU6 RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363 Drain-source voltage: 60V Drain current: 0.32A On-state resistance: 1.6Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.32W Polarisation: unipolar Kind of package: tape Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT363 |
Produkt ist nicht verfügbar |