TQM138KDCU6 RFG

TQM138KDCU6 RFG Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 0.32A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TQM138KDCU6 RFG Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 60V 0.32A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote TQM138KDCU6 RFG nach Preis ab 0.15 EUR bis 0.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TQM138KDCU6 RFG TQM138KDCU6 RFG Hersteller : Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 0.32A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
50+0.36 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
TQM138KDCU6 RFG Hersteller : TAIWAN SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Drain-source voltage: 60V
Drain current: 0.32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
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Im Einkaufswagen  Stück im Wert von  UAH