TQM150NB04CR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 40V 10A/41A PDFN56U, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-PDFNU (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V, Qualification: AEC-Q101.