TQM2N7002DCU6 RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: 60V, 0.26A, DUAL N-CHANNEL SMALL
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 376mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 260mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TQM2N7002DCU6 RFG Taiwan Semiconductor Corporation
Description: 60V, 0.26A, DUAL N-CHANNEL SMALL, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 376mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 30V, Rds On (Max) @ Id, Vgs: 3Ohm @ 260mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote TQM2N7002DCU6 RFG nach Preis ab 0.11 EUR bis 0.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TQM2N7002DCU6 RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: 60V, 0.26A, DUAL N-CHANNEL SMALLPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 376mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 30V Rds On (Max) @ Id, Vgs: 3Ohm @ 260mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TQM2N7002DCU6 RFG | Hersteller : Taiwan Semiconductor |
MOSFETs 60V, 0.26A, Dual N-Channel Small-signal MOSFETs |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
|