TQM2N7002KDCU6 RFG Taiwan Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.47 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.08 EUR |
| 9000+ | 0.08 EUR |
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Technische Details TQM2N7002KDCU6 RFG Taiwan Semiconductor
Description: MOSFET 2N-CH 60V 0.33A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 337mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote TQM2N7002KDCU6 RFG nach Preis ab 0.13 EUR bis 0.53 EUR
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TQM2N7002KDCU6 RFG | Hersteller : Taiwan Semiconductor Corporation |
 Description: MOSFET 2N-CH 60V 0.33A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 Power - Max: 337mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V |
auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM2N7002KDCU6 RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 0.33A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 337mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| TQM2N7002KDCU6 RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 330mA; 337mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.33A Power dissipation: 337mW Case: SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.7nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |